Identification of the dominant degradation mechanism for 1.3-µm InGaAsP buried heterostructure lasers

Although 1.3-μm InGaAsP lasers with extrapolated lifetimes in excess of 106 h at 20°C at 5-mW bias are commercially available from a number of different manufacturers, even greater reliability is desired for submarine systems1 and subscriber loop systems.2 For the latter case, a reliability goal of 106 h at 70°C has been proposed.2 In addition, improved reliability permits the commercial use of lasers at bias powers of 10-100 mW and creates opportunities for improved performance of optical fiber systems, direct communication with satellites, and other applications of lasers.