Influence of carrier diffusion on an anode trapped domain formation in a transferred electron device
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H. Suzuki | T. Nakamura | S. Hasuo | K. Kazetani | H. Ishiwari | S. Hasuo | T. Isobe | H. Suzuki | G. Goto | T. Isobe | H. Ishiwari | G. Goto | T. Nakamura | K. Kazetani
[1] O. Wada,et al. Monte Carlo calculations of diffusion coefficient of hot electrons in n‐type GaAs , 1974 .
[2] Masayuki Abe,et al. Monte Carlo Simulation of Gunn Domain Formations , 1975 .
[3] T. Isobe,et al. Two-dimensional domain dynamics in a planar Schottky-gate Gunn-effect device , 1975, IEEE Transactions on Electron Devices.
[4] William Shockley,et al. The Impedance Field Method of Noise Calculation in Active Semiconductor Devices , 1966 .
[5] M. Reiser,et al. Switching Behavior of Over‐Critically Doped Gunn Diodes , 1972 .
[6] J. S. Heeks. Some properties of the moving high-field domain in Gunn effect devices , 1966 .
[7] P. Jeppesen,et al. The influence of diffusion on the stability of the supercritical transferred electron amplifier , 1972 .
[8] H. Thim,et al. Stability and switching in overcritically doped Gunn diodes , 1971 .
[9] P. N. Butcher,et al. Calculation of the velocity-field characteristic for gallium arsenide , 1966 .
[10] Tadahiro Ohmi,et al. Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification , 1973 .
[11] A. Colquhoun,et al. Stationary Gunn domains created by anode doping gradient current-density reduction , 1974 .
[12] P. S. Hauge. Static negative resistance in Gunn effect materials with field-dependent carrier diffusion , 1971 .
[13] B. Källbäck. Stabilizing effects for the supercritical GaAs n+nn+-transferred electron amplifier , 1975 .
[14] T. Ikoma,et al. Simple analysis and computer simulation on lateral spreading of space charge in bulk GaAs , 1972 .
[15] S. Hasuo,et al. Five different modes of high-field domains due to field-dependent carrier diffusion , 1973 .
[16] T. Ohmi,et al. Influence of the carrier concentration on the mode of high-field domains , 1973 .
[17] G. S. Kino,et al. Transport Properties of GaAs , 1968 .
[18] H. W. Thim,et al. Computer Study of Bulk GaAs Devices with Random One‐Dimensional Doping Fluctuations , 1968 .
[19] B. S. Perlman,et al. Microwave properties and applications of negative conductance transferred electron devices , 1971 .
[20] Palle Jeppesen,et al. A high current drop GaAs bistable switch , 1974 .
[21] P. Jeppesen,et al. Computer simulations of the large signal characteristics of supercritical GaAs transferred electron amplifiers , 1973 .
[22] T. Ohmi,et al. Dynamic properties of electrons in two-valley semiconductors , 1970 .
[23] J. L. Teszner,et al. Influence of electron trapping on domain dynamics in epitaxial Gunn diodes , 1973 .
[24] B. Ridley,et al. Non-linear theory of electrical domains in the presence of trapping , 1967 .
[25] W Fawcett,et al. Effect of field-dependent diffusion on stable domain propagation in the Gunn effect , 1967 .
[26] F. Sterzer. Stabilization of supercritical transferred-electron amplifiers , 1969 .
[27] G. S. Hobson,et al. Stabilisation mechanism for 'supercritical' transferred-electron amplifiers , 1971 .