论文信息 - Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth

We demonstrate homoepitaxial growth of GaInN/GaN-based light emitting diodes (LED) on quasi-bulk GaN with an atomically flat polished surface. The threading dislocation densities of the epitaxial layers were 2-5 x 10 8 cm -2 which was one order of magnitude less than those grown on c-plane sapphire substrate. The growth defects introduced during the epitaxial process were also one order of magnitude smaller than those grown on the sapphire substrate. The crystalline quality and the optical properties of the epitaxial layer and device performance were much improved. The optical output power of the light emitting diode increased by more than one order of magnitude compared to those on sapphire substrate.

[1] Akira Sakai,et al. Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy , 1997 .

[2] Andrew G. Glen,et al. APPL , 2001 .

[3] Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy , 2001 .

[4] E. C. Carr,et al. CORRELATION OF CATHODOLUMINESCENCE INHOMOGENEITY WITH MICROSTRUCTURAL DEFECTS IN EPITAXIAL GAN GROWN BY METALORGANIC CHEMICAL-VAPOR DEPOSITION , 1997 .

[5] Motoaki Iwaya,et al. Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN , 1998 .

[6] Theeradetch Detchprohm,et al. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer , 1992 .

[7] Fernando Ponce,et al. Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques , 1996 .

[8] Robert F. Davis,et al. Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy , 1997 .