High power hybrid and MMIC amplifiers using wide-bandgap semiconductor devices on semi-insulating SiC substrates
暂无分享,去创建一个
J. Milligan | J. Palmour | S. Allen | R.P. Smith | S. Sheppard | J. Milligan | W. Pribble | J.W. Palmour | R.P. Smith | T. Smith | S.T. Allen | S.T. Sheppard | W.L. Pribble | Z. Ring | Z. Ring | T. Smith
[1] K. Doverspike,et al. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.
[2] R. Glass,et al. Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications , 2000 .
[3] J. Palmour,et al. High power demonstration at 10 GHz with GaN-AlGaN HEMT hybrid amplifiers , 2000, 58th DRC. Device Research Conference. Conference Digest (Cat. No.00TH8526).
[4] T.J. Smith,et al. Wide bandgap semiconductor devices and MMICs for RF power applications , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[5] P. Janke,et al. K-band GaN power HFET's with 6.6 W/mm CW saturated output power density and 35% power added efficiency at 20 GHz , 2001, Device Research Conference. Conference Digest (Cat. No.01TH8561).
[6] U. Mishra,et al. A 50-W AlGaN/GaN HEMT amplifier , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[7] John W. Palmour,et al. Technology development for GaN/AlGaN HEMT hybrid and MMIC amplifiers on semi-insulating SiC substrates , 2000, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122).