Separation of Individual Thermal Double‐Donor Levels by Laplace Deep‐Level Transient Spectroscopy

Thermal double donors (TDDs) are created by heat treatment of Czochralski‐grown Si at temperatures around 450 °C. A family of individual defects with very similar donor (TDDn0/+ with n = 0–16) and double‐donor (TDDn+/++) levels is known today. The close‐level positions of the individual TDDs result in broad and asymmetric deep‐level transient spectroscopy (DLTS) peaks. Herein, Laplace DLTS are used to study this asymmetry. Several well‐separated Laplace DLTS peaks are resolved in our samples. Metastable properties of the TDDs are taken as advantages to identify the double‐donor levels (++/+) of TDD0, TDD1, and TDD2.

[1]  V. Markevich,et al.  Electron emission and capture by oxygen-related bistable thermal double donors in silicon studied with junction capacitance techniques , 2018, Journal of Applied Physics.

[2]  M. Tomassini,et al.  Recombination activity associated with thermal donor generation in monocrystalline silicon and effect on the conversion efficiency of heterojunction solar cells , 2016 .

[3]  L. Arnberg,et al.  Investigating minority carrier trapping in n-type Cz silicon by transient photoconductance measurements , 2012 .

[4]  R. Jones.  Early Stages of Oxygen Precipitation in Silicon , 2011 .

[5]  V. Markevich,et al.  Spectroscopic observation of the TDD0 in silicon , 2003 .

[6]  Weber,et al.  Hydrogen passivation and reactivation of thermal donors in silicon. , 1993, Physical review. B, Condensed matter.

[7]  Zulehner,et al.  Observation of five additional thermal donor species TD12 to TD16 and of regrowth of thermal donors at initial stages of the new oxygen donor formation in Czochralski-grown silicon. , 1992, Physical review. B, Condensed matter.

[8]  P. Wagner,et al.  Thermal double donors in silicon , 1989 .

[9]  L. Makarenko.  On the cross section of electron capture into the deep state of thermal U− donors in Si , 1988 .

[10]  V. Markevich,et al.  Electrical and Optical Characterization of Thermal Donors in Silicon , 1986 .

[11]  L. Kimerling,et al.  Oxygen‐related donor states in silicon , 1981 .

[12]  H. Frisch,et al.  Mechanism of the Formation of Donor States in Heat-Treated Silicon , 1958 .

[13]  W. Kaiser.  Electrical and Optical Properties of Heat-Treated Silicon , 1957 .

[14]  J. Weber,et al.  Passivation of Thermal Donors by Atomic Hydrogen , 1996 .

[15]  L. Makarenko,et al.  Trapping of Minority Carriers in Thermal U−-Donors in n-Si , 1988 .