Advanced F2 lasers for microlithography

According to the SIA-Roadmap, the 157 nm wavelength of the F2 laser emission will be used for chip production with critical dimensions of 100 nm down tot eh 70 nm node. Currently al basic technologies for 157 nm lithography are under investigation and development at material suppliers, coating manufacturers, laser suppliers, lens and tool manufacturers, mask houses, pellicle manufacturers, and resist suppliers.