Modeling and simulation of single- and multiple-gate 2D MESFETs

We describe a physically based model for a two-dimensional (2D) MESFET, a novel hetero-dimensional transistor. The model is valid for a "single" gate in which the sidewall contacts are biased together, a dual-gate configuration in which the gates are biased independently, and a multiple-gate configuration for three or more side gates. The model has been implemented in the circuit simulator AIM-SPICE. The modeling results are in good agreement with the experimental data.

[1]  D. Frank,et al.  Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET's at the 25 nm channel length generation , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).

[2]  Michael S. Shur,et al.  The optoelectronic response of a laterally contacted 2-D MESFET , 1996 .

[3]  Michael S. Shur,et al.  Novel metal/2-DEG junction transistors , 1993, Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.

[4]  Michael S. Shur,et al.  RTD/2-D MESFET logic element for compact, ultra-low-power electronics , 1997 .

[5]  W.C.B. Peatman,et al.  Two-dimensional metal-semiconductor field effect transistor for ultra low power circuit applications , 1994, IEEE Electron Device Letters.

[6]  Michael S. Shur,et al.  Breakdown behavior of low-power pseudomorphic AlGaAs/InGaAs 2-D MESFET's , 1998 .

[7]  W.C.B. Peatman,et al.  Heterodimensional field effect transistors for ultra low power applications , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[8]  Michael S. Shur,et al.  Narrow channel 2-D MESFET for low power electronics , 1995 .

[9]  M. Hurt,et al.  Novel heterodimensional diodes and transistors , 1995 .

[10]  Michael S. Shur,et al.  Introduction to Device Modeling and Circuit Simulation , 1997 .

[11]  T. Ytterdal,et al.  Sub-half-micrometer width 2-D MESFET , 1996, IEEE Electron Device Letters.

[12]  Boris Gelmont,et al.  Theory of junction between two-dimensional electron gas and p-type semiconductor , 1992 .

[13]  Michael S. Shur,et al.  Semiconductor Device Modeling For VLSI , 1993 .

[14]  Michael S. Shur,et al.  Enhanced GaAs MESFET CAD model for a wide range of temperatures , 1995 .

[15]  A. Neviani,et al.  Parasitic bipolar effects leading to on-state breakdown in 2D-MESFETs , 1997, 27th European Solid-State Device Research Conference.