论文信息 - Photoluminescence from structural defects in GaN

Photoluminescence from structural defects in GaN

Abstract We studied optical manifestation of structural defects in unintentionally doped GaN. A series of sharp peaks (labeled as Y i with i =1,2,…,11) was observed in the low-temperature photoluminescence spectrum in the photon energy range between 2.6 and 3.46 eV. We attribute the majority of these peaks to excitons bound to yet unidentified structural defects. A preliminary transmission electron microscopy study in one of the samples exhibiting strong Y i lines revealed numerous inclusions, presumably inversion domains, which may be responsible for at least some of the Y i lines.

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