Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications

We report on the wafer bonding of an InGaN/GaN LED structure on sapphire to a p-type ZnSSe layer grown by molecular beam epitaxy on GaAs as a first step in fabricating III–N resonant cavity structures with II–VI distributed Bragg reflectors. The ZnSSe surface was prepared using thermal and polishing processes to insure a smooth and flat surface. Wafers were successfully bonded in nitrogen at 270°C. The GaAs substrate was then removed and contacts were made to p-type GaAs/ZnSSe and n-type GaN layers. This wafer bonded GaN based LED was evaluated with current-voltage (I–V) measurements and electroluminescence (EL) measurements.