Surface properties of n-type gallium arsenide
暂无分享,去创建一个
[1] F. Berz. Large signal ac field effect in depletion layers for wide gap semiconductors , 1968 .
[2] C. N. Berglund. Electroluminescence Using GaAs Mis Structures , 1966 .
[3] R. Hall,et al. Surface capacity of oxide coated semiconductors , 1965 .
[4] V. V. Milenin,et al. Nonequilibrium Field Effect on Si in the Region of High Depletion , 1965 .
[5] H. Gatos,et al. Gallium arsenide surface states , 1964 .
[6] John L. Davis. Surface states on the (1̄1̄1̄) surface of indium antimonide , 1964 .
[7] I. Flinn,et al. Surface measurements on gallium arsenide , 1964 .
[8] A. Many,et al. Surface breakdown phenomena in germanium under high transverse fields , 1964 .
[9] G. Rupprecht. INVESTIGATION OF SURFACE STATES ON SEMICONDUCTORS BY THE PULSED FIELD EFFECT , 1963 .
[10] G. Dorda. Internal Field Emission on Germanium Surface at a. c. Field Effect , 1963 .
[11] Richard Williams. Surface photovoltage measurements on cadmium sulfide , 1962 .
[12] E. O. Johnson. Large-Signal Surface Photovoltage Studies with Germanium , 1958 .
[13] W. Brattain,et al. Physical Theory of Semiconductor Surfaces , 1955 .
[14] J. Lagrenaudie,et al. Modulation de la conductance d'un semi-conducteur par un champ électrique , 1952 .
[15] W. Read,et al. Statistics of the Recombinations of Holes and Electrons , 1952 .