论文信息 - Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers

Effective electron velocities in silicon MOSFETs exceeding the bulk saturation values of 10/sup 7/ cm/s at room temperature and 1.3*10/sup 7/ cm/s at liquid-nitrogen temperature are inferred. This conclusion suggests that electron velocity overshoot occurs over a large portion of the device channel length. To infer this phenomenon, submicrometer-channel-length Si MOSFETs with lightly doped inversion layers were fabricated. These devices have low field mobility of 450 cm/sup 2//V-s and showed only slight short-channel effects. Effective carrier velocities are calculated from the saturated transconductance g/sub m/ at V/sub DS/=1.5 V after correction for parasitic resistances of source and drain.<<ETX>>

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