Modeling of threshold‐voltage‐shift dependency on drain bias in amorphous‐silicon thin‐film transistors in active‐matrix organic light‐emitting‐diode displays
暂无分享,去创建一个
[1] A. Nathan,et al. Drain-bias dependence of threshold voltage stability of amorphous silicon TFTs , 2004, IEEE Electron Device Letters.
[2] J. R. Hughes,et al. Time and temperature dependence of instability mechanisms in amorphous silicon thin-film transistors , 1989 .
[3] J. Pritchard,et al. The effect of surface states and fixed charge on the field effect conductance of amorphous silicon , 1983 .
[4] Toshihisa Tsukada,et al. Characterization of instability in amorphous silicon thin‐film transistors , 1991 .
[5] Steven C. Deane,et al. Field‐effect conductance in amorphous silicon thin‐film transistors with a defect pool density of states , 1993 .
[6] Michael S. Shur,et al. Physics of amorphous silicon based alloy field‐effect transistors , 1984 .
[7] W. Metselaar,et al. Application of the Defect Pool Model in Modelling of a-Si:H Solar Cells , 1995 .
[8] Powell,et al. Defect pool in amorphous-silicon thin-film transistors. , 1992, Physical review. B, Condensed matter.
[9] E. Lueder,et al. Modeling of amorphous-silicon thin-film transistors for circuit simulations with SPICE , 1992 .
[10] I. D. French,et al. Bias dependence of instability mechanisms in amorphous silicon thin‐film transistors , 1987 .