论文信息 - Modeling of threshold‐voltage‐shift dependency on drain bias in amorphous‐silicon thin‐film transistors in active‐matrix organic light‐emitting‐diode displays

Modeling of threshold‐voltage‐shift dependency on drain bias in amorphous‐silicon thin‐film transistors in active‐matrix organic light‐emitting‐diode displays

— A theoretical model to interpret appearances of the threshold voltage shift in hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) is developed to better understand the instability of a-Si:H TFTs for the driving transistors in active-matrix organic light-emitting-diode (AMOLED) displays. This model assumes that the defect creation at channel in a-Si:H is proportional to the carrier concentration, leading to the defect density varying along the channel depending on the bias conditions. The model interprets a threshold-voltage-shift dependency on the drain-stress bias. The model predicts the threshold voltage shift stressed under a given gate bias applying the drain saturation voltage is 66% of that with zero drain bias, and it even goes down to 50–60% of that when stressed by applying twice the drain saturation voltage.

Takatoshi Tsujimura | Koichi Miwa | Yuichi Maekawa

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