GEOMETRY AND BIAS DEPENDENCE OF LOW-FREQUENCY RANDOM TELEGRAPH SIGNAL AND 1/f NOISE LEVELS IN MOSFETS

Low-frequency noise in MOSFETs is considered to originate from two distinctive sources: Random Telegraph Signal caused by carrier traps at the border of the SiO2/Si interface and 1/f fluctuation due to inherent nature of lattice scattering in a Si crystal. It is very important to distinguish these two mechanisms. Relative amplitude of RTS and 1/f noise depends on the number of carriers under the gate electrode, which makes it channel size as well as gate-bias dependent. In this paper, we discuss the dependence of the amplitudes of RTS and 1/f noise in MOSFETs on sample geometry and gate bias condition. We discuss low-frequency noise reduction by utilizing low electron-temperature plasma for gate oxidation as well.

[1]  Nuditha Vibhavie Amarasinghe,et al.  Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs , 2000 .

[2]  F. Hooge.  Discussion of recent experiments on 1/ƒ noise , 1972 .

[3]  R. Clevers,et al.  Volume and temperature dependence of the 1f noise parameter α in Si , 1989 .

[4]  E. P. Vandamme,et al.  Critical discussion on unified 1/f noise models for MOSFETs , 2000 .

[5]  L.K.J. Vandamme,et al.  Bulk and surface 1/f noise , 1989 .

[6]  M. J. Kirton,et al.  Capture and emission kinetics of individual Si:SiO2 interface states , 1986 .

[7]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[8]  L.K.J. Vandamme,et al.  On the additivity of generation-recombination spectra. Part 3: The McWhorter model for 1/f noise in MOSFETs , 2005 .

[9]  S. Machlup,et al.  Noise in Semiconductors: Spectrum of a Two‐Parameter Random Signal , 1954 .

[10]  T.G.M. Kleinpenning,et al.  On noise and random telegraph noise in very small electronic devices , 1990 .

[11]  Michael J. Uren,et al.  1/f and random telegraph noise in silicon metal‐oxide‐semiconductor field‐effect transistors , 1985 .

[12]  R. Howard,et al.  Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency ( 1 f ?) Noise , 1984 .

[13]  T. Ohmi,et al.  Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma , 2001 .

[14]  L.K.J. Vandamme,et al.  1/f noise in MOS devices, mobility or number fluctuations? , 1994 .

[15]  Gerard Ghibaudo,et al.  Low frequency noise characterization of 0.18 μm Si CMOS transistors , 1998 .

[16]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[17]  John H. Scofield,et al.  Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures , 2000 .

[18]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[19]  Phillip J. Restle,et al.  Individual oxide traps as probes into submicron devices , 1988 .

[20]  L.K.J. Vandamme,et al.  On the anomalous behavior of the relative amplitude of RTS noise , 1998 .