Formation of Cu–Cu interfaces with ideal adhesive strengths via room temperature pressure bonding in ultrahigh vacuum
暂无分享,去创建一个
[1] Arifur Rahman,et al. System-level performance evaluation of three-dimensional integrated circuits , 2000, IEEE Trans. Very Large Scale Integr. Syst..
[2] W. A. Miller,et al. Surface free energies of solid metals: Estimation from liquid surface tension measurements , 1977 .
[3] D. Keller,et al. Effect of Contamination on the Adhesion of Metallic Couples in Ultra‐High Vacuum , 1967 .
[4] Subra Suresh,et al. Evolution of stresses in passivated and unpassivated metal interconnects , 1998 .
[5] Ulf Lindberg,et al. Adhension quantification methods for wafer bonding , 2005 .
[6] Hubert M. Pollock,et al. Surface forces, deformation and adherence at metal microcontacts , 1984 .
[7] A. Fan,et al. Copper Wafer Bonding , 1999 .
[8] T. Itoh,et al. Bumpless interconnect through ultrafine Cu electrodes by means of surface-activated bonding (SAB) method , 2006, IEEE Transactions on Advanced Packaging.
[9] C. Frisbie,et al. Rupture of Hydrophobic Microcontacts in Water: Correlation of Pull-Off Force with AFM Tip Radius , 2000 .
[10] Bharat Bhushan,et al. Adhesion and stiction: Mechanisms, measurement techniques, and methods for reduction , 2003 .
[11] J. Sader,et al. Calibration of rectangular atomic force microscope cantilevers , 1999 .
[12] K. Kendall,et al. Surface energy and the contact of elastic solids , 1971, Proceedings of the Royal Society of London. A. Mathematical and Physical Sciences.