论文信息 - Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology

Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology

The total ionization dose effects and the single event effects in a 0.25 mum Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8times1012 proton/cm2. The results indicate that this process is radiation tolerant.

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