Abstract We discuss the effects of both the electrical power supplied to an r.f. magnetron discharge and the Ar gas pressure on the growth of amorphous carbon (a-C) films on silicon substrates by sputtering of a graphite target. The power applied to the magnetron cathode was provided in a continuous wave mode as well as in a pulsed mode where the amplitude of the r.f. signal was square-wave modulated. In the continuous wave deposition mode the power was varied from 100 to 300 W at a fixed pressure of 0.2 Pa, and the pressure from 0.2 to 2 Pa at a constant power of 300 W. The pulsed mode processes were performed by varying the r.f. peak power from 200 to 400 W at 100 Hz of modulating frequency and 20% of duty cycle. At 0.2 Pa pressure the deposition rate increased from 1 to 6 nm/min with increasing power, and decreased to 2 nm/min as pressure was increased up to 2 Pa. The compressive stress was approximately 3 GPa for films grown at low pressure and low power, and decreased below 1 GPa at higher pressure or power. Raman analysis revealed that increasing pressure favours the growth of a-C films with more disordered sp 2 domains, whereas the increase in r.f. power first leads to a reduction and then to an increase in the number and clustering of sp 2 sites into ordered rings. The friction coefficient measured using a ball-on-disk tribometer ranged between 0.1 and 0.2, being the films deposited at higher power levels that possessed the lowest values. These results were discussed in terms of the effects induced by pressure and power on the energy and flux of the species impinging the film-growing surface.
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