Temperature dependence of dynamic and DC characteristics of quantum-well and quantum-dot lasers: a comparative study

Dynamic and static characteristics of high-speed 1.55- and 1-/spl mu/m wavelength tunneling injection quantum-well lasers and 1-/spl mu/m wavelength self-organized quantum-dot lasers, have been measured as a function of temperature. While differential gain of the quantum-well lasers greatly increased with lowering of temperature (by a factor of 50), gain compression increased along with it, resulting in about the same intrinsic damping limit (K-factor) over a wide range of temperatures and only moderate increases in bandwidth (20-35 GHz). This suggests that increase in differential gain alone is not sufficient to improve modulation characteristics directly. Because of the mechanism of gain compression, lasers which are damping limited may not see a large improvement in modulation bandwidth simply by operating at lower temperature. In contrast, the modulation bandwidth of the quantum-dot lasers increased from 5-6 GHz at room temperature to larger than 20 GHz at 90 K. This behavior is explained by considering electron-hole scattering as the dominant mechanism-for electron capture in quantum-dots. The measured temperature dependence of the K-factor is analyzed with consideration of electron-hole scattering, and the value extracted for the electron intersubband spacing from this analysis, 60 meV, agrees with the theoretically calculated value of 56 meV.

[1]  Masayuki Ishikawa,et al.  High speed quantum-well lasers and carrier transport effects , 1992 .

[2]  Aaas News,et al.  Book Reviews , 1893, Buffalo Medical and Surgical Journal.

[3]  Lam,et al.  Carrier thermalization in sub-three-dimensional electronic systems: Fundamental limits on modulation bandwidth in semiconductor lasers. , 1994, Physical review. B, Condensed matter.

[4]  Jasprit Singh,et al.  Rapid carrier relaxation in In 0.4 Ga 0.6 A s / G a A s quantum dots characterized by differential transmission spectroscopy , 1998 .

[5]  Jasprit Singh,et al.  Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study , 1997 .

[6]  Nikolai N. Ledentsov,et al.  InGaAs-GaAs quantum-dot lasers , 1997 .

[7]  T. Makino,et al.  Temperature dependence of the threshold current in gain‐coupled distributed feedback lasers with periodically etched quantum wells: Mechanism for an appearance of infinite T0 , 1996 .

[8]  Modulation Characteristics of High Speed ( GHz ) Tunneling Injection InP / InGaAsP 1 . 55 m Ridge Waveguide Lasers Extracted from Optical and Electrical Measurements , 1998 .

[9]  Nonlinear gain caused by cavity standing wave dielectric grating as an explanation of the relationship between resonance frequency and damping rate of semiconductor diode lasers , 1988 .

[10]  Masahiro Asada,et al.  Density-matrix theory of semiconductor lasers with relaxation broadening model-gain and gain-suppression in semiconductor lasers , 1985 .

[11]  Modulation characteristics of high speed (f/sub -3 dB/=20 GHz) tunneling injection InP/InGaAsP 1.55 /spl mu/m ridge waveguide lasers extracted from optical and electrical measurements , 1997 .

[12]  S. Denbaars,et al.  Ultrahigh speed performance of a quantum well laser at cryogenic temperatures , 1994 .

[13]  P. Bhattacharya,et al.  Carrier dynamics in high-speed (f/sub -3 dB/>40 GHz) 0.98-μm multiquantum-well tunneling injection lasers determined from electrical impedance measurements , 1997, IEEE Photonics Technology Letters.

[14]  D. Klotzkin,et al.  Quantum capture times at room temperature in high-speed In/sub 0.4/Ga/sub 0.6/As-GaAs self-organized quantum-dot lasers , 1997, IEEE Photonics Technology Letters.

[15]  K. Hess,et al.  Severe gain suppression due to dynamic carrier heating in quantum well lasers , 1997 .

[16]  S. Sze.  High-speed semiconductor devices , 1990 .

[17]  W. Rideout,et al.  Well-barrier hole burning in quantum well lasers , 1991, IEEE Photonics Technology Letters.

[18]  0 . 98-m Multiple-Quantum-Well Tunneling Injection Laser with 98-GHz Intrinsic Modulation Bandwidth , 1998 .

[19]  P. Bhattacharya,et al.  A "cold" InP-based tunneling injection laser with greatly reduced Auger recombination and temperature dependence , 1995, IEEE Photonics Technology Letters.

[20]  Peter S. Zory,et al.  Quantum well lasers , 1993 .

[21]  Jen-Inn Chyi,et al.  Theoretical Study of the Temperature Dependence of 1.3-pm AlGaInAs-InP Multiple-Quantum-Well Lasers , 1996 .

[22]  Jasprit Singh,et al.  Effects of non‐uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 μm InP‐based multiple quantum well laser , 1996 .

[23]  Pallab Bhattacharya,et al.  Quantum Capture Times at Room Temperature in High-Speed In Ga As-GaAs Self-Organized Quantum-Dot Lasers , 1997 .

[24]  Francoise Chatenoud,et al.  A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers , 1995 .

[25]  Richard Schatz,et al.  30 GHz direct modulation bandwidth in detuned loaded InGaAsP DBR lasers at 1.55 /spl mu/m wavelength , 1997 .

[26]  P. Jessop,et al.  A relationship for temperature dependence of threshold current for 1.3-μm compressively strained-layer multiple-quantum-well lasers , 1997, IEEE Photonics Technology Letters.

[27]  Masahiro Kobayashi,et al.  Effect of recombination in separate-confinement heterostructure (SCH) layers on temperature characteristics of semiconductor lasers , 1997 .

[28]  P. Bhattacharya,et al.  Temperature dependence of the threshold current in 1.55-μm strain-compensated multiquantum-well distributed-feedback lasers , 1998, IEEE Photonics Technology Letters.

[29]  D. L. Coblentz,et al.  Temperature dependence of long wavelength semiconductor lasers , 1992 .

[30]  Egeler,et al.  Electron relaxation in quantum dots by means of Auger processes. , 1992, Physical review. B, Condensed matter.

[31]  Z. Li,et al.  A comparative study of temperature sensitivity of InGaAsP and AlGaAs MQW lasers using numerical simulations , 1995 .

[32]  Rajaram Bhat,et al.  0.98-/spl mu/m multiple-quantum-well tunneling injection laser with 98-GHz intrinsic modulation bandwidth , 1997 .

[33]  M. Asada,et al.  Gain and the threshold of three-dimensional quantum-box lasers , 1986 .