Computing-in-Memory Paradigm Based on STT-MRAM with Synergetic Read/Write-Like Modes

With the surge in demand for data storage and processing in emerging applications, the traditional CMOS-based Von-Neumann architecture is facing challenges such as memory wall and static power consumption. In order to conquer the above-mentioned bottlenecks in computing systems, computing­in-memory (CiM) architectures based on non-volatile memory (NVM) have been widely researched. In this paper, we propose a CiM paradigm based on spin-transfer torque magnetic ran­dom access memory (STT-MRAM), which combines common read-like mode (RLM) and write-like mode (WLM). On the basis of realizing the basic functions AND/OR/NAND/NOR, our design coordinates the high speed of RLM and the integrity of WLM to perform complex operations like full-adder (FA) and XOR/XNOR. In addition, the high speed and low power consumption of the proposed CiM paradigm are established by circuit-level simulation with a 40 nm design kit.