COM2 SiGe modular BiCMOS technology for digital, mixed-signal, and RF applications

The COM2 SiGe modular BiCMOS technology has been developed to allow efficient design and manufacturing of digital, mixed-signal, and RF integrated circuits, as well as enabling system-on-chip (SOC) integration. The technology is based on the 0.16 /spl mu/m COM2 digital CMOS process which features 1.5 V NMOS and PMOS transistors with 2.4 nm gate oxide, 0.135 /spl mu/m gate length, and up to 7 metal levels. Technology enhancement modules including dense SRAM, SiGe NPN bipolar transistor, and a variety of passive components have been developed to allow the COM2 technology to be cost-effectively optimized for a wide range of applications.

[1]  M.R. Pinto,et al.  Integration of high-Q inductors in a latch-up resistant CMOS technology , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[2]  M. Mastrapasqua,et al.  Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[3]  R.J. McPartland,et al.  1.25 volt, low cost, embedded flash memory for low density applications , 2000, 2000 Symposium on VLSI Circuits. Digest of Technical Papers (Cat. No.00CH37103).