Semiconductor heterostructures and device structures investigated by photoreflectance spectroscopy

In this review, we present the photoreflectance (PR) spectro scopy as a powerful tool for investigations of bulk semiconductors and semiconductor heterostructures. W e discuss the application of PR technique to investigation of various properties of semiconduct ors, including the composition of multinary compounds, distribution of the built-in electric field and the influence of perturbations such as temperature, strain, pressure; low-dimensional structures such as quantum wells, multiple quantum wells and superlattices, quantum dots; and the structures of semi conductor devices like transistors and vertical/planar light emitting laser structures.