Surface-Potential-Based Compact Model of Bulk MOSFET

[1]  Xin Li,et al.  The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications , 2009, IEEE Journal of Solid-State Circuits.

[2]  G. Gildenblat,et al.  Benchmark Tests for MOSFET Compact Models With Application to the PSP Model , 2009, IEEE Transactions on Electron Devices.

[3]  W. Wu,et al.  (Invited) The new CMC standard compact MOS model PSP: advantages for RF applications , 2008, RFIC 2008.

[4]  Xin Li,et al.  PSP-SOI: A Surface Potential Based Compact Model of Partially Depleted SOI MOSFETs , 2007, 2007 IEEE Custom Integrated Circuits Conference.

[5]  G. Gildenblat,et al.  A Compact Model for Valence-Band Electron Tunneling Current in Partially Depleted SOI MOSFETs , 2007, IEEE Transactions on Electron Devices.

[6]  G. Gildenblat,et al.  Benchmarking the PSP Compact Model for MOS Transistors , 2007, 2007 IEEE International Conference on Microelectronic Test Structures.

[7]  S. Sze,et al.  Physics of Semiconductor Devices: Sze/Physics , 2006 .

[8]  Ronald van Langevelde,et al.  Compact modeling of noise in CMOS , 2006, IEEE Custom Integrated Circuits Conference 2006.

[9]  G. Gildenblat,et al.  PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[10]  H.J. Mattausch,et al.  HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation , 2006, IEEE Transactions on Electron Devices.

[11]  G. Gildenblat,et al.  A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations , 2006, IEEE Transactions on Electron Devices.

[12]  G.D.J. Smit,et al.  The Physical Background of JUNCAP2 , 2006, IEEE Transactions on Electron Devices.

[13]  Xuemei Xi,et al.  Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETs , 2006, IEEE Transactions on Electron Devices.

[14]  C.C. McAndrew,et al.  Validation of MOSFET model Source–Drain Symmetry , 2006, IEEE Transactions on Electron Devices.

[15]  A. Scholten,et al.  New fundamental insights into capacitance modeling of laterally nonuniform MOS devices , 2006, IEEE Transactions on Electron Devices.

[16]  A.J. Scholten,et al.  Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices , 2005, IEEE Transactions on Electron Devices.

[17]  Xin Li,et al.  Unified non-quasi-static MOSFET model for large-signal and small-signal simulations , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[18]  Xin Li,et al.  SP-SOI: a third generation surface potential based compact SOI MOSFET Model , 2005, Proceedings of the IEEE 2005 Custom Integrated Circuits Conference, 2005..

[19]  C. McAndrew,et al.  A physically based, scalable MOS varactor model and extraction methodology for RF applications , 2005, IEEE Transactions on Electron Devices.

[20]  C. Hu,et al.  Advanced Compact Models for MOSFETs , 2005 .

[21]  S. Mudanai,et al.  An efficient surface potential solution algorithm for compact MOSFET models , 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

[22]  W. Grabinski,et al.  RF distortion analysis with compact MOSFET models , 2004, Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571).

[23]  Weimin Wu,et al.  Physics-based mathematical conditioning of the MOSFET surface potential equation , 2004, IEEE Transactions on Electron Devices.

[24]  A. J. Scholten,et al.  Recent Enhancements of MOS Model 11 , 2004 .

[25]  G. Gildenblat,et al.  A surface potential-based compact model of n-MOSFET gate-tunneling current , 2004, IEEE Transactions on Electron Devices.

[26]  G. Gildenblat,et al.  Reemergence of the surface-potential-based compact MOSFET models , 2003, IEEE International Electron Devices Meeting 2003.

[27]  D.B.M. Klaassen,et al.  New compact model for induced gate current noise [MOSFET] , 2003, IEEE International Electron Devices Meeting 2003.

[28]  G. Gildenblat,et al.  Quasi-static and nonquasi-static compact MOSFET models based on symmetric linearization of the bulk and inversion charges , 2003 .

[29]  R. Havens,et al.  Noise modeling for RF CMOS circuit simulation , 2003 .

[30]  G Gildenblat,et al.  Substrate Current in Surface-Potential-Based Compact MOSFET Models , 2003 .

[31]  G. Gildenblat,et al.  A Surface-Potential-Based Extrinsic Compact MOSFET Model , 2003 .

[32]  R. Rios,et al.  A three-transistor threshold voltage model for halo processes , 2002, Digest. International Electron Devices Meeting,.

[33]  G. Gildenblat,et al.  Scattering matrix based compact MOSFET model , 2002, Digest. International Electron Devices Meeting,.

[34]  Christian Enz,et al.  An MOS transistor model for RF IC design valid in all regions of operation , 2002 .

[35]  C. C. McAndrew,et al.  Accuracy of approximations in MOSFET charge models , 2002 .

[36]  G Gildenblat,et al.  Overview of An Advanced Surface-Potential-Based MOSFET Model (SP) , 2002 .

[37]  K. Mistry,et al.  A general partition scheme for gate leakage current suitable for MOSFET compact models , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[38]  D.B.M. Klaassen,et al.  Gate current: Modeling, /spl Delta/L extraction and impact on RF performance , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

[39]  Zhiping Yu,et al.  Impact of gate direct tunneling current on circuit performance: a simulation study , 2001 .

[40]  D.B.M. Klaassen,et al.  Advanced Compact MOS Modelling , 2001, 31st European Solid-State Device Research Conference.

[41]  D.B.M. Klaassen,et al.  Compact modelling of pocket-implanted MOSFETs , 2001, 31st European Solid-State Device Research Conference.

[42]  A. Litwin,et al.  Overlooked interfacial silicide-polysilicon gate resistance in MOS transistors , 2001 .

[43]  G. Gildenblat,et al.  Symmetric bulk charge linearisation in charge-sheet MOSFET model , 2001 .

[44]  G. Gildenblat,et al.  Analytical approximation for the MOSFET surface potential , 2001 .

[45]  Jin Cai,et al.  Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors , 2001 .

[46]  C. Hu,et al.  BSIM4 gate leakage model including source-drain partition , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

[47]  F. Klaassen,et al.  An explicit surface-potential-based MOSFET model for circuit simulation , 2000 .

[48]  D.B.M. Klaassen,et al.  A large signal non-quasi-static MOS model for RF circuit simulation , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).

[49]  Jung Hee Lee,et al.  Fast scheduling algorithm for input and output buffered ATM switch with multiple switching planes , 1999 .

[50]  G. Gildenblat,et al.  Analytical approximation for perturbation of MOSFET surface potential by polysilicon depletion layer , 1999 .

[51]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[52]  C. C. McAndrew,et al.  Practical modeling for circuit simulation , 1998, IEEE J. Solid State Circuits.

[53]  Yun Seop Yu,et al.  A Physics-Based, SPICE (Simulation Program with Integrated Circuit Emphasis)-Compatible Non-Quasi-Static MOS (Metal-Oxide-Semiconductor) Transient Model Based on the Collocation Method , 1998 .

[54]  R. van Langevelde,et al.  Accurate drain conductance modeling for distortion analysis in MOSFETs , 1997, International Electron Devices Meeting. IEDM Technical Digest.

[55]  W. Liu,et al.  A CAD-compatible non-quasi-static MOSFET model , 1996, International Electron Devices Meeting. Technical Digest.

[56]  G. Ghibaudo,et al.  Low Frequency Fluctuations in Scaled Down Silicon CMOS Devices Status and Trends , 1994, ESSDERC '94: 24th European Solid State Device Research Conference.

[57]  A. R. Boothroyd,et al.  MISNAN-a physically based continuous MOSFET model for CAD applications , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[58]  C. Sah.  Fundamentals of Solid State Electronics , 1991 .

[59]  K. Saraswat,et al.  Thickness limitations of SiO/sub 2/ gate dielectrics for MOS ULSI , 1990 .

[60]  C. Hu,et al.  A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .

[61]  T. Chan,et al.  Subbreakdown drain leakage current in MOSFET , 1987, IEEE Electron Device Letters.

[62]  C. Turchetti,et al.  A non-quasi-static analysis of the transient behavior of the long-channel most valid in all regions of operation , 1987, IEEE Transactions on Electron Devices.

[63]  J. Brews,et al.  Threshold shifts due to nonuniform doping profiles in surface channel MOSFET's , 1979, IEEE Transactions on Electron Devices.

[64]  G. W. Taylor,et al.  The effects of two-dimensional charge sharing on the above-threshold characteristics of short-channel IGFETS , 1979 .

[65]  R.W. Dutton,et al.  A charge-oriented model for MOS transistor capacitances , 1978, IEEE Journal of Solid-State Circuits.

[66]  J. Brews.  A charge-sheet model of the MOSFET , 1978 .

[67]  Y.A. El-Mansy,et al.  A simple two-dimensional model for IGFET operation in the saturation region , 1977, IEEE Transactions on Electron Devices.

[68]  L. Esaki,et al.  Tunneling in a finite superlattice , 1973 .

[69]  C. Sah,et al.  Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistors☆ , 1966 .

[70]  Colin C. McAndrew,et al.  Surface potential equation for bulk MOSFET , 2009 .

[71]  G. Gildenblat,et al.  PSP: An advanced surface-potential-based MOSFET model , 2006 .

[72]  G. Gildenblat,et al.  SP: an advanced surface-potential-based compact MOSFET model , 2003, Proceedings of the IEEE 2003 Custom Integrated Circuits Conference, 2003..

[73]  R. van Langevelde,et al.  New Compact Model for Induced Gate Current Noise , 2003 .

[74]  R. van Langevelde,et al.  Physical Background of MOS Model 11 , 2003 .

[75]  van R Ronald Langevelde.  A compact MOSFET model for distortion analysis in analog circuit design , 1998 .

[76]  C. C. McAndrew,et al.  An improved MOSFET model for circuit simulation , 1998 .

[77]  N. D. Arora,et al.  Characterization and modeling of the n- and p-channel MOSFETs inversion-layer mobility in the range 25–125°C , 1994 .

[78]  Hong June Park,et al.  A charge sheet capacitance model of short channel MOSFETs for SPICE , 1991, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[79]  Ping-Keung Ko,et al.  A physics-based MOSFET noise model for circuit simulators , 1990 .

[80]  Y. Tsividis.  Operation and modeling of the MOS transistor , 1987 .

[81]  N. Arora,et al.  A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation , 1987, IEEE Transactions on Electron Devices.

[82]  J. T. Clemens,et al.  Characterization of the electron mobility in the inverted <100> Si surface , 1979, 1979 International Electron Devices Meeting.

[83]  A. van der Ziel,et al.  Noise in Solid State Devices , 1978 .

[84]  K. Seeger.  Semiconductor Physics: An Introduction , 1973 .

[85]  H. Gummel,et al.  Large-signal analysis of a silicon Read diode oscillator , 1969 .

[86]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[87]  A. S. Grove.  Physics and Technology of Semiconductor Devices , 1967 .

[88]  E. Kane.  Zener tunneling in semiconductors , 1960 .