Electrical Conduction in n-Type InSb between 2°k and 300°k

Using a digital recording technique the electrical conductivity and Hall coefficient have been measured between 2?k and 300?k for samples of InSb containing from 1018 down to 5 X 1013 conduction electrons cm-3. The behaviour of the Hall mobility has been accounted for by a combination of acoustic lattice and ionized impurity scattering and the concentration of scattering centres estimated. The intrinsic carrier concentration has been calculated from the results obtained above 180?k while the results below 20?k show no evidence of a donor activation energy even in the purest material. At 4?k deviations from ohmic behaviour were observed for fields above 0.1 v cm-1.