Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers

A novel intrinsic collector-base capacitance (C CB ) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 μm SiGe BiCMOS process could output 9 V pp differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W.