New approaches for a solar-pumped GaAs laser

Abstract Approaches are discussed for a direct solar-pumped semiconductor laser. Efficiencies of 35% should be achievable. The intensity threshold can be decreased by using a wider bandgap material for the absorber material than for the lasing material and by the use of light-trapping structures. The calculated minimum threshold is about 50 times the solar concentration (without light-trapping) or about one solar concentration (with light-trapping).

[1]  G. Cody,et al.  Intensity enhancement in textured optical sheets for solar cells , 1982, IEEE Transactions on Electron Devices.

[2]  A. Mooradian,et al.  Scalable high‐power optically pumped GaAs laser , 1991 .

[3]  M. Green,et al.  Light trapping properties of pyramidally textured surfaces , 1987 .

[4]  Geoffrey A. Landis,et al.  Photovoltaic receivers for laser beamed power in space , 1991, The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.