论文信息 - Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation - 字舞流文

Enhanced Inversion Mobility on 4H-SiC $(\hbox{11}\overline{\hbox{2}} \hbox{0})$ Using Phosphorus and Nitrogen Interface Passivation

S. Dhar | L. Feldman | Y. Sharma | J. Williams | Yi Xu | Gang Liu | A. Ahyi | T. Isaacs-smith