论文信息 - 100-K Operation of Al-Based Single-Electron Transistors

100-K Operation of Al-Based Single-Electron Transistors

We have made Al-based single-electron transistors with an artificially fabricated 20-nm island electrode by utilizing standard electron-beam lithography and three-angle shadow evaporation. A periodic gate-voltage dependence of current at above 100 K is demonstrated with this device. In addition, we increased the charging energy about 20% by using anodization.

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