The electronic configuration of substitutional Fe in silicon
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M. Fanciulli | H. P. Gunnlaugsson | G. Weyer | R. Sielemann | V. Mishin | V. Fedoseyev | A. Burchard
[1] Eicke R. Weber,et al. Iron and its complexes in silicon , 1999 .
[2] B. Meyer,et al. Interface and bulk defects in SiC/GaN heterostructures characterized using thermal admittance spectroscopy , 1999 .
[3] Gilles,et al. Impact of the electronic structure on the solubility and diffusion of 3d transition elements in silicon. , 1990, Physical review. B, Condensed matter.
[4] Laubach,et al. Diffusion and isomer shift of interstitial iron in silicon observed via in-beam Mössbauer spectroscopy. , 1990, Physical review letters.
[5] Scheffler,et al. Electronic and magnetic structure of 3d-transition-metal point defects in silicon calculated from first principles. , 1990, Physical review. B, Condensed matter.
[6] Oswald,et al. Energy level of the 0 to + charge transition of substitutional manganese in silicon. , 1985, Physical review letters.
[7] A. Zunger,et al. Electronic structure of transition-atom impurities in semiconductors: Substitutional 3d impurities in silicon , 1983 .
[8] A. Zunger,et al. Theory of substitutional and interstitial 3 d impurities in silicon , 1982 .
[9] C. Ammerlaan,et al. Electron-Paramagnetic Resonance on Iron-Related Centers in Silicon , 1982 .