A manufacturable high-k MIM dielectric with outstanding reliability and voltage linearity for RF and mixed-signal technologies

We demonstrate the simultaneous optimization of 100,000 POH reliability and voltage linearity (<40 ppm/V) for a high-k MIM dielectric (4.5 fF/m/sup 2/) that is both Al and Cu BEOL compatible. Also, we discuss the scaling of dielectric films to achieve excellent bias linearity, while attaining a capacitance density of 7.2 fF/m/sup 2/.

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