论文信息 - Low insertion loss 60 GHz CMOS H-shaped resonator BPF

Low insertion loss 60 GHz CMOS H-shaped resonator BPF

This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.

[1] Kaixue Ma,et al. Miniaturized 60-GHz On-Chip Multimode Quasi-Elliptical Bandpass Filter , 2013, IEEE Electron Device Letters.

[2] E. Pistono,et al. High-Performance Shielded Coplanar Waveguides for the Design of CMOS 60-GHz Bandpass Filters , 2012, IEEE Transactions on Electron Devices.

[3] Huey-Ru Chuang,et al. A novel ultra-compact and low-insertion-loss 77.GHz CMOS on-chip bandpass filter with adjustable transmission zeros , 2014, 2014 44th European Microwave Conference.

[4] E. M. Jones,et al. Microwave Filters, Impedance-Matching Networks, and Coupling Structures , 1980 .

[5] Ramesh K. Pokharel,et al. Compact Size On-Chip 60 GHz H-Shaped Resonator BPF , 2016, IEEE Microwave and Wireless Components Letters.

[6] Ramesh K. Pokharel,et al. 60 GHz on-chip mixed coupled BPF with H-shaped defected ground structures , 2016 .

[7] Keiji Yoshida,et al. 60GHz-band low loss on-chip band pass filter with patterned ground shields for millimeter wave CMOS SoC , 2011, 2011 IEEE MTT-S International Microwave Symposium.