Ionizing Radiation Effects on Non Volatile Read Only Memory Cells

Threshold voltage (<i>V</i><sub>th</sub>) and drain-source current (<i>I</i><sub>DS</sub>) behaviour of nitride read only memories (NROM) were studied both in situ during irradiation or after irradiation with photons and ions. <i>V</i><sub>th</sub> loss fluctuations are well explained by the same Weibull statistics regardless of the irradiation species and total dose. Results of drain current measurements in-situ during irradiation with photons and ions reveal a step-like increase of <i>I</i><sub>DS</sub> with the total irradiation dose. A brief physical explanation is also provided.

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