Wavelength-resolved low-frequency noise of GaInN/GaN green light emitting diodes

Light intensity low-frequency noise was studied in green GaInN∕GaN quantum well light emitting diodes. The light intensity noise was measured as a function of wavelength within the light emitting diode spectral emission line. The spectral noise density is found to increase with decreasing wavelength. Comparing the wavelength-resolved noise with the total light noise, we found that the emission intensity fluctuates synchronously across the entire linewidth. The source of this noise can be ascribed to nonradiative recombination centers.

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