Influence of the flux density on the radiation damage of bipolar silicon transistors by protons and electrons

It was found experimentally that the radiation damage of bipolar n-p-n transistors increased by a factor of 8--12 when the proton flux density was reduced from 4.07 x 10/sup 10/ to 2.5 x 10/sup 7/ cm/sup -2/ sec /sup -1/. In the case of p-n-p transistors the effect was opposite: there was a reduction in the radiation damage by a factor of 2--3 when the dose rate was lowered between the same limits. A similar effect was observed for electrons but at dose rates three orders of magnitude greater. The results were attributed to the dependences of the radiation defect-forming reactions on the charge state of defects which was influenced by the formation of disordered regions in the case of proton irradiation.