Near-infrared In1-xGaxP1-zAszdouble-heterojunction lasers: Constant-temperature LPE growth and operation in an external-grating cavity

InP-In 1-x Ga x P 1-z As z -InP ( x \sim 0.08, z \sim 0.17 ) double-heterojuncfion (DH) lasers emitting at \lambda \sim 1.0 \mu m (77 K) have been fabricated by constant-temperature liquid-phase epitaxy (LPE). The crystal-growth process is described and compared to previous work on visible spectrum ( \lambda \sim 6000 -A) In 1-x Ga x P 1-z As z double-heterojunction lasers. Emission spectra are presented for the near-infrared quaternary DH lasers. In particular, the observation of cavity oscillations in the low-level spontaneous-emission spectra allows the determination of the index dispersion quantity over a wide wavelength range. Finally, these In 1-x Ga x P 1-z As z DH lasers are operated in an external-grating cavity. Such operation permits tunable, narrow-linewidth laser emission and provides information concerning radiative-recombination processes. Comparisons are made to earlier work on external-grating operation of visible-spectrum ( \lambda \sim 6000 -A) In 1-x Ga x P 1-z As z DH lasers.

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