A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10 Gb/s optical-fiber links

A monolithic integrated driver circuit developed for laser modulation in a 10 Gb/s optical-fiber link is presented. The IC was fabricated in a self-aligned double-polysilicon Si-bipolar production technology with f/sub T//spl ap/25 GHz. The circuit can be operated up to 14 Gb/s with a maximum output voltage swing as high as 3.6 V at 50 /spl Omega/ load (corresponding to an internal current swing of 108 mA), which allows the circuit to drive external modulators. In addition, the circuit can be used for direct laser modulation at 10 Gb/s, since the output current swing can easily be controlled over a wide range (e.g., from 15 mA to 60 mA). Problems in the design of such driver circuits as well as their solutions are discussed in detail. >

[1]  H. Rein.  Relationship between transient response and output characteristics of avalanche transistors , 1977 .

[2]  T. Suzaki,et al.  Pseudomorphic 2DEG FET IC's for 10 Gb/s optical communication systems with external optical modulation , 1992 .

[3]  Emmerich Bertagnolli,et al.  Silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s , 1992 .

[4]  H. Rein,et al.  Der einfluss des basisbahnwiderstandes und der ladungsträgermultiplikation auf das ausgangskennlinienfeld von planartransistoren , 1972 .

[5]  John C. Cartledge,et al.  The effect of laser chirping on lightwave system performance , 1989 .

[6]  Hans Martin Rein.  Design of a Silicon Bipolar Laser- and Line-Driver IC with Adjustable Pulse Shape and Amplitude for Data Rates Around and Above 10 Gbit/s , 1992 .

[7]  R. Ranfft,et al.  A simple but efficient analog computer for simulation of high-speed integrated circuits , 1977, IEEE Journal of Solid-State Circuits.

[8]  J. Hauenschild,et al.  A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology , 1992, Proceedings of the 1992 Bipolar/BiCMOS Circuits and Technology Meeting.

[9]  R. Linke,et al.  Modulation induced transient chirping in single frequency lasers , 1985 .

[10]  H. Stubing,et al.  A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model , 1987, IEEE Transactions on Electron Devices.

[11]  P. Wisk,et al.  10 Gbit/s AlGaAs/GaAs HBT driver IC for lasers or lightwave modulators , 1991 .

[12]  H. Rein,et al.  13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers , 1994 .

[13]  J. Hauenschild,et al.  30 Gbit/s multiplexer and demultiplexer ICs in silicon bipolar technology , 1992 .

[14]  U. Langmann,et al.  A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s , 1993 .

[15]  H. Rein,et al.  13 Gbit/s Si bipolar preamplifier for optical front ends , 1993 .

[16]  Hans-Martin Rein.  Multi-gigabit-per-second silicon bipolar ICs for future optical-fiber transmission systems , 1988 .