Memory device and a memory data error management method

A memory device and a memory data error management method is provided. The memory device is detected and correct the error bits in the data read from the memory cells, and to identify the memory cells of the detected error bits are stored. The memory device assigned to the verify voltage corresponding to read the rest of the memory cell assigned to a verify voltage, and corresponding to the correction to the identified memory cell bit data. The memory device is re-stored data in the memory cells by using the verify voltage is assigned. This may increase the holding (retention) time period of data in the memory device. A multi-bit cell, a multilevel cell, ECC, Error Control Coding, charge loss