Valence band studies of clean and oxygen exposed GaAs(100) surfaces

[1]  W. Harrison.  Abstract: Surface reconstruction , 1977 .

[2]  M. Bonn,et al.  Approach to structure determination of compound semiconductor surfaces by kinematical LEED calculations: GaAs(110) and ZnSe(110) , 1977 .

[3]  P. Pianetta,et al.  Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements , 1977 .

[4]  S. Louie,et al.  Relaxation effects on the (110) surface of GaAs , 1976 .

[5]  P. Pianetta,et al.  Oxidation properties of GaAs(110) surfaces , 1976 .

[6]  James R. Chelikowsky,et al.  Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors , 1976 .

[7]  C. Duke,et al.  Atomic geometry of cleavage surfaces of tetrahedrally coordinated compound semiconductors , 1976 .

[8]  S. Louie,et al.  THEORY OF SEMICONDUCTOR SURFACE STATES AND METAL-SEMICONDUCTOR INTERFACES. , 1976 .

[9]  D. Eastman,et al.  Electronic surface properties of III–V semiconductors: Excitonic effects, band‐bending effects, and interactions with Au and O adsorbate layers , 1976 .

[10]  A. Huijser,et al.  Contact potential differences for III–V compound surfaces , 1976 .

[11]  P. Pianetta,et al.  Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP , 1976 .

[12]  C. Duke,et al.  Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110) , 1976 .

[13]  W. Harrison.  Surface reconstruction on semiconductors , 1976 .

[14]  W. Spicer,et al.  Photoemission study of surface states of the (110) GaAs surface , 1976 .

[15]  A. Huijser,et al.  Work function variations of gallium arsenide cleaved single crystals , 1975 .

[16]  G. Lapeyre,et al.  Evidence for a Surface-State Exciton on GaAs(110) , 1975 .

[17]  D. Eastman,et al.  Relation of Schottky Barriers to Empty Surface States on III-V Semiconductors , 1975 .

[18]  Marvin L. Cohen,et al.  Tight‐binding calculations of the valence bands of diamond and zincblende crystals , 1975 .

[19]  J. Joannopoulos,et al.  INTRINSIC SURFACE STATES OF (110) SURFACES OF GROUP IV AND III-V SEMICONDUCTORS , 1974 .

[20]  S. Ciraci,et al.  Surface state band on GaAs (110) face , 1974 .

[21]  T. Fischer,et al.  Electronic properties of clean cleaved {110} GaAs surfaces☆ , 1971 .

[22]  A. Koma,et al.  Electronic surface states on clean and oxygen‐exposed GaAs surfaces , 1976 .

[23]  A. Koma,et al.  Surface studies on clean and oxygen-exposed GaAs and Ge surfaces by low-energy electron loss spectroscopy , 1975 .

[24]  D. W. Turner,et al.  A Discussion on photoelectron spectroscopy - Molecular photoelectron spectroscopy , 1970, Philosophical Transactions of the Royal Society of London. Series A, Mathematical and Physical Sciences.

[25]  K. Siegbahn.  ESCA applied to free molecules , 1969 .