High-efficiency O-band Mach-Zehnder modulator based on InGaAsP/Si hybrid MOS capacitor
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We demonstrated O-band InGaAsP/Si hybrid MOS optical modulators using direct wafer bonding with a thin Al<inf>2</inf>O<inf>3</inf> bonding interface. Owing to the large electron-induced refractive index change in InGaAsP, we successfully achieved V<inf>π</inf>L of 0.094 Vcm.