论文信息 - Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000

Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000

This paper examines, from a modeling perspective, the effects of spot size, data address and raster writing strategy on lithographic performance. Both PBS, the current U.S. standard for mask making, and ZEP 7000, a new, much higher contrast material, will be examined for their impact on lithographic quality. Simulation is used to demonstrate the differences between resists, writing strategies and their implementation.

Chris A. Mack

[1] Charles A. Sauer,et al. 180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000 , 1998, Photomask Technology.

[2] C. Mack. Development of Positive Photoresists , 1987 .

[3] Chris A. Mack,et al. Lithography model tuning: matching simulation to experiment , 1996, Advanced Lithography.

[4] Chris A. Mack. Inside Prolith-A Comprehensive Guide to Optical Lithography Simulation , 1997 .

[5] K. Valiev,et al. The physics of submicron lithography , 1992 .

[6] Chris A. Mack,et al. Three-dimensional electron-beam lithography simulation , 1997, Advanced Lithography.

[7] David W. Alexander,et al. Electron-beam lithography simulation for mask making: II. Comparison of the lithographic performance of PBS and EBR 900-M1 , 1997, Photomask Technology.

[8] George E. P. Box,et al. Empirical Model‐Building and Response Surfaces , 1988 .

[9] Chris A. Mack,et al. Electron Beam Lithography Simulation For Mask Making, Part I , 1998 .

[10] D. Kyser,et al. Chapter 4 - Electron Resist Process Modeling , 1987 .

[11] Chris A. Mack,et al. Electron-beam lithography simulation for mask making: I , 1997, Photomask Technology.