Physical Models for Silicon VLSI

Device Modeling based on the self-consistent solution of fundamental semiconductor equations dates back to the famous work of Gummel in 1964 [31]. Since then numerical device modeling has been applied to nearly all important devices. For some citations regarding the history of modeling the interested reader is refered to [55].

[1]  A. D. Sutherland.  An improved empirical fit to Baraff's universal curves for the ionization coefficients of electron and hole multiplication in semiconductors , 1980, IEEE Transactions on Electron Devices.

[2]  J. Plummer,et al.  A low-temperature NMOS technology with Cesium-implanted load devices , 1987, IEEE Transactions on Electron Devices.

[3]  J. Dziewior,et al.  Auger coefficients for highly doped and highly excited silicon , 1977 .

[4]  H. Grubin.  The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.

[5]  N. Ahmad,et al.  Velocity-field profile of n-silicon: A theoretical analysis , 1986, IEEE Transactions on Electron Devices.

[6]  C. Canali,et al.  Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature , 1975, IEEE Transactions on Electron Devices.

[7]  S. Hanamura,et al.  Performance and hot-carrier effects of small CRYO-CMOS devices , 1987, IEEE Transactions on Electron Devices.

[8]  C. R. Crowell,et al.  Threshold energy effect on avalanche breakdown voltage in semiconductor junctions , 1975 .

[9]  Robert W. Dutton,et al.  PISCES-MC: a multiwindow, multimethod 2-D device simulator , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[10]  H. Gummel.  A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[11]  D.S. Yaney,et al.  Short-channel effects in MOSFET's , 1985, IEEE Electron Device Letters.

[12]  Richard C. Jaeger,et al.  Behavior of electrically small depletion mode MOSFETs at low temperature , 1981 .

[13]  M. Omar,et al.  Drift and diffusion of charge carriers in silicon and their empirical relation to the electric field , 1987 .

[14]  S. Odanaka,et al.  A mobility model for submicrometer MOSFET device simulations , 1987, IEEE Electron Device Letters.

[15]  J. S. Blakemore.  Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductor , 1982 .

[16]  W. J. Cody,et al.  Rational Chebyshev approximations for Fermi-Dirac integrals of orders -1/2, 1/2 and 3/2 , 1967 .

[17]  E. Conwell,et al.  Electrical Properties of N -Type Germanium , 1954 .

[18]  Siegfried Selberherr,et al.  Low temperature MOS device modeling , 1989, Proceedings of the Workshop on Low Temperature Semiconductor Electronics,.

[19]  G. Iafrate,et al.  Theory and applications of near ballistic transport in semiconductors , 1988, Proc. IEEE.

[20]  Siegfried Selberherr,et al.  Analysis of Breakdown Phenomena in MOSFET's , 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[21]  V. L. Rideout,et al.  Very small MOSFET's for low-temperature operation , 1977, IEEE Transactions on Electron Devices.

[22]  Yuan Taur,et al.  Submicrometer-channel CMOS for low-temperature operation , 1987, IEEE Transactions on Electron Devices.

[23]  G. Sai-Halasz.  Processing and Characterization of Ultra-Small Silicon Devices , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

[24]  S. Odanaka,et al.  A mobility model for submicrometer MOSFET simulations including hot-carrier-induced device degradation , 1988 .

[25]  K. Yano,et al.  Optimum crystallographic orientation of submicrometer CMOS devices operated at low temperatures , 1987, IEEE Transactions on Electron Devices.

[26]  M. Kinugawa,et al.  Effects of silicon surface orientation on submicron CMOS devices , 1985, 1985 International Electron Devices Meeting.

[27]  R. E. Thomas,et al.  Carrier mobilities in silicon empirically related to doping and field , 1967 .

[28]  C. R. Crowell,et al.  Temperature dependence of avalanche multiplication in semiconductors , 1966 .

[29]  J. Hauser,et al.  Electron and hole mobilities in silicon as a function of concentration and temperature , 1982, IEEE Transactions on Electron Devices.

[30]  N. Arora,et al.  A semi-empirical model of the MOSFET inversion layer mobility for low-temperature operation , 1987, IEEE Transactions on Electron Devices.

[31]  S. Li,et al.  The dopant density and temperature dependence of electron mobility and resistivity in n-type silicon , 1977 .

[32]  G. Baccarani.  Physics of Submicron Devices , 1982 .

[33]  J. Plummer,et al.  Substrate current in N-channel and P-channel MOSFETs between 77K and 300K: Characterization and simulation , 1985, 1985 International Electron Devices Meeting.

[34]  G. Baccarani,et al.  An investigation of steady-state velocity overshoot in silicon , 1985 .

[35]  J. Dorkel,et al.  Carrier mobilities in silicon semi-empirically related to temperature, doping and injection level , 1981 .

[36]  S. Selberherr.  Analysis and simulation of semiconductor devices , 1984 .

[37]  D. R. Decker,et al.  Temperature dependence of carrier ionization rates and saturated velocities in silicon , 1975 .

[38]  H.I. Smith,et al.  Electron velocity overshoot at 300 K and 77 K in silicon MOSFETs with submicron channel lengths , 1986, 1986 International Electron Devices Meeting.

[39]  Richard C. Jaeger,et al.  Temperature dependent threshold behavior of depletion mode MOSFETs: Characterization and simulation☆ , 1979 .

[40]  C. Canali,et al.  Saturation values of the electron drift velocity in silicon between 300°K and 4.2°K , 1970 .

[41]  A. Wexler,et al.  An introduction to the numerical analysis of semiconductor devices and integrated circuits: Edited by J. J. H. Miller Boole Press, Dublin, 1981. 75 pp. Softback , 1983 .

[42]  T. Nishida,et al.  A physically based mobility model for MOSFET numerical simulation , 1987, IEEE Transactions on Electron Devices.

[43]  Siegfried Selberherr,et al.  MINIMOS—A two-dimensional MOS transistor analyzer , 1980 .

[44]  K. Yano,et al.  Optimum crystallographic orientation of submicron CMOS devices , 1985, 1985 International Electron Devices Meeting.

[45]  A. Kamgar,et al.  Miniaturization of Si MOSFET's at 77 K , 1982, IEEE Transactions on Electron Devices.

[46]  S. Selberherr,et al.  MINIMOS 3: A MOSFET simulator that includes energy balance , 1987, IEEE Transactions on Electron Devices.

[47]  G. Gildenblat,et al.  Low-temperature substrate current characterization of N-channel MOSFET's , 1985, 1985 International Electron Devices Meeting.

[48]  K. Blotekjaer.  Transport equations for electrons in two-valley semiconductors , 1970 .

[49]  P. Robertson,et al.  Ballistic transport and properties of submicrometer Silicon MOSFET's from 300 to 4.2 K , 1986, IEEE Transactions on Electron Devices.

[50]  G. Baccarani,et al.  Transconductance degradation in thin-Oxide MOSFET's , 1983, IEEE Transactions on Electron Devices.

[51]  J.D. Plummer,et al.  Substrate current at cryogenic temperatures: Measurements and a two-dimensional model for CMOS technology , 1987, IEEE Transactions on Electron Devices.