论文信息 - Room-Temperature Bonding of Si Wafers to Pt Films on SiO2 or LiNbO3 Substrates Using Ar-Beam Surface Activation

Room-Temperature Bonding of Si Wafers to Pt Films on SiO2 or LiNbO3 Substrates Using Ar-Beam Surface Activation

We have developed a method to bond Si wafers to Pt films on SiO2 or LiNbO3 substrates at room temperature. Ar beam etching is used to remove contaminants from the surfaces of the Si wafers and the Pt films, and the surfaces become activated. Strong bonding between Si and Pt is achieved without any heat treatment. Low-temperature chemical reaction between Si and Pt is assumed to play a role in the bonding process. This method enables the integration of diverse materials. Many applications of Pt film buried between two wafers are also expected.

Ryutaro Maeda | Tadatomo Suga | Hideki Takagi | Naoe Hosoda

[1] Takao Abe,et al. Fabrication and Bonding Strength of Bonded Silicon-Quartz Wafers , 1993 .

[2] Stefan Johansson,et al. Assembling three-dimensional microstructures using gold-silicon eutectic bonding , 1994 .

[3] T. Suga,et al. Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation , 1998 .

[4] W. Spicer,et al. Si(111)-Pt interface at room temperature: A synchrotron radiation photoemission study , 1982 .

[5] Eli Yablonovitch,et al. Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond , 1991 .

[6] Ryutaro Maeda,et al. Transmission Electron Microscope Observations of Si/Si Interface Bonded at Room Temperature by Ar Beam Surface Activation , 1999 .

[7] Tadatomo Suga,et al. Structure of AlAl and AlSi3N4 interfaces bonded at room temperature by means of the surface activation method , 1992 .