Determination of interface energy band diagram between (100)Si and mixed Al-Hf oxides using internal electron photoemission

Internal electron photoemission is used to investigate the electronic structure of the Si/Hf–Al oxide interfaces as a function of oxide composition. In the mixed oxides, the energy position and the density of states in the conduction band show little sensitivity to the Hf content. At the same time, the energy band diagram of the Si/oxide interface appears to be very close to that of the Si/Al2O3 interface, suggesting that the conduction band is derived mostly from the states of Al ions.

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