论文信息 - Shallow and deep donors induced by light ions in N-type silicon

Shallow and deep donors induced by light ions in N-type silicon

We have studied the evolution of the doping profile in power device components after irradiation by protons and alpha particles. Both annealed and unannealed samples were measured by C-V measurements carried out as functions of the sample temperature and of the Fermi level position. For samples irradiated by protons, the deep donors were present before annealing while the shallow donors appear after annealing. For the samples irradiated with alpha particles the deep donors were present in unannealed samples while no donor (whether shallow or deep) was measured after annealing at 400/spl deg/C.

E. Ntsoenzok | J. Barbot | P. Desgardin | J. Vernois | D. Isabelle

[1] E. Ntsoenzok,et al. Defect levels in n-silicon after high energy and high dose implantation of proton , 1996 .

[2] E. Ntsoenzok,et al. Defect levels of proton-irradiated silicon with doses ranging from 1 × 1012 cm−2 to 1 × 1013 cm−2 , 1995 .

[3] E. Ntsoenzok,et al. Study of the defects induced in N-type silicon irradiated by 1-3 MeV protons , 1994 .

[4] Pavel Hazdra,et al. Accurate simulation of fast ion irradiated power devices , 1994 .

[5] C. D. Lamp,et al. Changes in the silicon thermal donor energy level as a function of anneal time , 1991 .

[6] M. Z. Iqbal,et al. α‐radiation‐induced deep levels in low‐doped n‐type silicon , 1990 .

[7] I. Kohno. Production of fast-switching power thyristors by proton irradiation , 1989 .

[8] Wolfgang Wondrak,et al. Helium Implantation for Lifetime Control in Silicon Power Devices , 1987, ESSDERC '87: 17th European Solid State Device Research Conference.

[9] M. Miyake,et al. Deep Donor Levels in He Implanted n‐Type Silicon , 1984 .

[10] Lionel C. Kimerling,et al. Influence of deep traps on the measurement of free‐carrier distributions in semiconductors by junction capacitance techniques , 1974 .

[11] Y. Ohmura,et al. Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors , 1972 .