Method of reading data on non-volatile semiconductor memory and circuit therewith

1. the art that the invention defined in the claims How the data lead of a nonvolatile semiconductor memory and hence the circuit of 2. The invention attempts to solve the technical challenges It is data which can guarantee a stable read operation of the semiconductor memory device read method and circuit accordingly to provide. 3. Resolution of the subject matter of the invention, A plurality of memory transistors, and constitute a NAND cell string, the memory transistors are the bit lines at the time of are arranged in matrix form in bit lines of the word line in the row direction and the column direction to form a memory cell array, and data lead according to the nonvolatile semiconductor memory device to be supplied to the bit line by a current set after filling the separation means to a predetermined potential: Is connected to said separating means comprises a reading means for detecting the delay data stored in the memory transistor with no latch operation by the separate nodes separated from the bit line. 4. An important use of the invention, It is preferably used as an improved lead-time of the semiconductor memory.