Impurity Effect on the Formation of Terraces in GaAs LPE Growth

Terraces on the surfaces of GaAs LPE layers grown from Sn or Ge doped solutions are studied. The concentration of Sn (X) or Ge (X) in the growth solution is varied from 0.01 to 15 at%. The terraces sensitively depend on the doping concentration. The width and height of terraces decrease with increasing X or X. Though the effects of Sn and Ge on the terrace formation differ when compared as a function of X or X, they agree well when compared as a function of the concentration of Sn (NSn) or Ge (NGe) in grown layers. Es werden Terrassen auf den Oberflachen von GaAs-LPE-Schichten, die aus mit Sn oder Ge dotier-ten Losungen gezuchtet wurden, beobachtet. Die Konzentration von Sn (X) oder Ge (X) in der Zuchtungslosung wird von 0,01 bis 15 At% variiert. Die Terrassen hangen empfindlich von der Dotierungskonzentration ab. Die Breite und Hohe der Terrassen nehmen mit zunehmendem X oder X ab. Obwohl die Einflusse von Se und Ge auf die Terrassenbildung als Funktion von X oder X verschieden sind, stimmen sie gut in Abhangigkeit von den Konzentrationen von Sn (NSn) oder Ge (NGe) in den gewachsenen Schichten uberein.

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