AlGaN/GaN High Electron Mobility Transistors with V-shaped-Gate-Recess Structure

The AlGaN/GaN HEMTs with V-shaped gate structures are proposed and their feasibility is investigated by using two-dimensional device simulations. The V-shaped gate distributes the electric field of the gate edge (drain side) and thereby improves breakdown characteristics. The off-state breakdown voltage is significantly increased from 70 to 179 V by adding a V-shaped gate to the conventional structure.