Application of nanojunction-based RRAM to reconfigurable IC

A novel reconfigurable architecture, rFPGA, is developed by utilising high-density resistive memory (RRAM) circuits as FPGA components. Different from the existing CMOS-nano hybrid FPGAs that use crossbars, the rFPGA mainly consists of 1T1R RRAM structures (one CMOS transistor is integrated with a two-terminal resistive nanojunction) that can be fabricated using an efficient CMOS-compatible process. These 1T1R structures can significantly improve the FPGA memory and routing circuits, and enable the rFPGA to achieve at least a 2× density enhancement along with a 10% reduction of delay and power, compared with the corresponding CMOS FPGA.

[1]  S. Haddad,et al.  Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory , 2008 .

[2]  D. Strukov,et al.  CMOL FPGA: a reconfigurable architecture for hybrid digital circuits with two-terminal nanodevices , 2005 .

[3]  H. Hwang,et al.  Resistance switching of copper doped MoOx films for nonvolatile memory applications , 2007 .

[4]  Qi Liu,et al.  Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ , 2008, IEEE Electron Device Letters.

[5]  Sangsul Lee,et al.  Resistance Switching Characteristics for Nonvolatile Memory Operation of Binary Metal Oxides , 2007 .

[6]  S.L. Lim,et al.  Electrically Bistable Thin-Film Device Based on PVK and GNPs Polymer Material , 2007, IEEE Electron Device Letters.

[7]  Rainer Waser,et al.  Comparison of three different architectures for active resistive memories , 2007 .

[8]  R. Williams,et al.  Nano/CMOS architectures using a field-programmable nanowire interconnect , 2007 .

[9]  André DeHon,et al.  Nanowire-based programmable architectures , 2005, JETC.

[10]  S. Haddad,et al.  Switching characteristics of Cu2O metal-insulator-metal resistive memory , 2007 .

[11]  Wei Wang,et al.  3-D nFPGA: A Reconfigurable Architecture for 3-D CMOS/Nanomaterial Hybrid Digital Circuits , 2007, IEEE Transactions on Circuits and Systems I: Regular Papers.

[12]  V.V. Zhirnov,et al.  Memory technology for post CMOS era , 2005, IEEE Circuits and Devices Magazine.

[13]  M. Kozicki,et al.  Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$ , 2007, IEEE Transactions on Electron Devices.