论文信息 - MBE growth of HgCdTe and device applications

MBE growth of HgCdTe and device applications

The recent progress in MBE growth of HgCdTe at the Research Center for Advanced Materials and Devices, and the National Laboratory for Infrared Physics is reported. It is found that the excellent compositional uniformity and reproducibility of HgCdTe can be archived by MBE technique. The results of surface morphology, dislocation density, electrical properties and focal plane array detectors are described in the paper.

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