Strain effects on photoluminescence polarization of InAs/GaAs self‐assembled quantum dots
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O. Wada | Y. Nakata | T. Kita | H. Ebe | M. Sugawara | P. Jayavel | Hirokazu Tanaka | K. Kou
[1] Mitsuru Sugawara,et al. Polarization-Independent Photoluminescence from Columnar InAs/GaAs Self-Assembled Quantum Dots , 2002 .
[2] Ray Murray,et al. Optical properties of bilayer InAs/GaAs quantum dot structures: Influence of strain and surface morphology , 2002 .
[3] Haruhiko Kuwatsuka,et al. Nonlinear gain dynamics in quantum-dot optical amplifiers and its application to optical communication devices , 2001 .
[4] H. Ishikawa,et al. Quantum-Dot Semiconductor Optical Amplifiers for High Bit-Rate Signal Processing over 40 Gbit/s , 2001, Technical Digest. CLEO/Pacific Rim 2001. 4th Pacific Rim Conference on Lasers and Electro-Optics (Cat. No.01TH8557).
[5] H. Ishikawa,et al. Application of spectral-hole burning in the inhomogeneously broadened gain of self-assembled quantum dots to a multiwavelength-channel nonlinear optical device , 2000, IEEE Photonics Technology Letters.
[6] Yozo Shimada,et al. Bound-to-continuum intersubband photoconductivity of self-assembled InAs quantum dots in modulation-doped heterostructures , 1999 .
[7] P. G. Piva,et al. Manipulating the energy levels of semiconductor quantum dots , 1999 .
[8] M. Jaroš,et al. ABSORPTION SPECTRA AND OPTICAL TRANSITIONS IN INAS/GAAS SELF-ASSEMBLED QUANTUM DOTS , 1997 .
[9] Cusack,et al. Electronic structure of InAs/GaAs self-assembled quantum dots. , 1996, Physical review. B, Condensed matter.
[10] Gregory Raybon,et al. BER measurements of frequency converted signals using four-wave mixing in a semiconductor laser amplifier at 1, 2.5, 5 and 10 Gbit/s , 1994 .
[11] Manfred Bayer,et al. Semiconductor physics: One at a time, please , 2002, Nature.