Transverse structures in resonatorless absorptive switching in bulk ZnSe

Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.

[1]  C. Klingshirn,et al.  Optical bistability in semiconductors induced by thermal effects , 1986 .

[2]  Mohammad R. Taghizadeh,et al.  Optical bistability in bulk ZnSe due to increasing absorption and self‐focusing , 1985 .

[3]  H. Gerritsen,et al.  Ambipolar diffusion measurements in semiconductors using nonlinear transient gratings , 1978 .

[4]  Stephan W Koch,et al.  Band‐edge nonlinearities in direct‐gap semiconductors and their application to optical bistability and optical computing , 1988 .

[5]  H. Gibbs Optical Bistability Controlling Light With Light , 1985 .

[6]  R. Bube Temperature Dependence of the Width of the Band Gap in Several Photoconductors , 1955 .

[7]  I. Galbraith,et al.  Diffusive transverse coupling of bistable elements - Switching waves and crosstalk , 1985, IEEE Journal of Quantum Electronics.

[8]  V. A. Stadnik,et al.  Optical Bistability and Formation of Localized and Moving High Absorption Domains in ZnSe and ZnCdS , 1988 .

[9]  Nasser N Peyghambarian,et al.  Microsecond room-temperature optical bistability and crosstalk studies in ZnS and ZnSe interference filters with visible light and milliwatt powers , 1984 .

[10]  Stephan W. Koch,et al.  Optical nonlinearities and instabilities in semiconductors , 1986 .

[11]  F. Henneberger,et al.  Dynamical Effects in Increasing Absorption Optical Bistability of Thermal Origin , 1987 .

[12]  H. E. Schmidt,et al.  Theoretical explanation of the absorptive optical bistability in semiconductors due to band‐gap shrinkage , 1984 .

[13]  D. Miller,et al.  Optical bistability due to increasing absorption. , 1984, Optics letters.

[14]  V. A. Stadnik Optical bistability and effect of output signal pulsations due to increasing absorption in bulk ZnSe , 1988 .

[15]  Lindberg,et al.  Structure, formation, and motion of kinks in increasing-absorption optical bistability. , 1986, Physical review. A, General physics.