Ge/IIIV fin field-effect transistor common gate process and numerical simulations

Abstract. This study investigates the manufacturing process of thermal atomic layer deposition (ALD) and analyzes its thermal and physical mechanisms. Moreover, experimental observations and computational fluid dynamics (CFD) are both used to investigate the formation and deposition rate of a film for precisely controlling the thickness and structure of the deposited material. First, the design of the TALD system model is analyzed, and then CFD is used to simulate the optimal parameters, such as gas flow and the thermal, pressure, and concentration fields, in the manufacturing process to assist the fabrication of oxide–semiconductors and devices based on them, and to improve their characteristics. In addition, the experiment applies ALD to grow films on Ge and GaAs substrates with three-dimensional (3-D) transistors having high electric performance. The electrical analysis of dielectric properties, leakage current density, and trapped charges for the transistors is conducted by high- and low-frequency measurement instruments to determine the optimal conditions for 3-D device fabrication. It is anticipated that the competitive strength of such devices in the semiconductor industry will be enhanced by the reduction of cost and improvement of device performance through these optimizations.

[1]  C. Detavernier,et al.  Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors , 2012 .

[2]  Toshio Ogino,et al.  Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study , 1995 .

[3]  M. Takenaka,et al.  Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties , 2013 .

[4]  Pekka Soininen,et al.  Perfectly Conformal TiN and Al2O3 Films Deposited by Atomic Layer Deposition , 1999 .

[5]  H.C. Lin,et al.  Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric , 2007, IEEE Electron Device Letters.

[6]  J. Jur,et al.  Atomic layer deposition of Al(2)O(3) and ZnO at atmospheric pressure in a flow tube reactor. , 2011, ACS applied materials & interfaces.

[7]  C. O. Chui,et al.  Interface Layers for High-k/Ge Gate Stacks: Are They Necessary? , 2006 .

[8]  Jesse S. Jur,et al.  Effect of temperature and gas velocity on growth per cycle during Al2O3 and ZnO atomic layer deposition at atmospheric pressure , 2012 .

[9]  Selective dry-etching process for fabricating Ge gate-all-around field-effect transistors on Si substrates , 2013 .

[10]  M. Yakimov,et al.  Metal-oxide-semiconductor capacitors on GaAs with high-k gate oxide and amorphous silicon interface passivation layer , 2006 .

[11]  Tomonori Nishimura,et al.  Opportunities and challenges for Ge CMOS - Control of interfacing field on Ge is a key (Invited Paper) , 2009 .

[12]  F. Allibert,et al.  Defect delineation and characterization in SiGe, Ge and other semiconductor-on-insulator structures , 2009 .

[13]  Y. Xuan.  Submicrometer inversion-type enhancement-mode InGaAs MOSFET with atomic-layer-deposited Al 2 O 3 as gate dielectric , 2014 .

[14]  S. Spiga,et al.  HfO2 as gate dielectric on Ge: interfaces and deposition techniques , 2006 .

[15]  Tsung-Da Lin,et al.  III–V Metal–Oxide–Semiconductor Field-Effect Transistors with High κ Dielectrics , 2007 .

[16]  Duygu Kuzum,et al.  Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100) , 2008 .

[17]  Yuanyuan Xie,et al.  On the physical and chemical details of alumina atomic layer deposition: A combined experimental and numerical approach , 2015 .

[18]  C. H. Lee,et al.  Material potential and scalability challenges of germanium CMOS , 2011, 2011 International Electron Devices Meeting.

[19]  Shinichi Takagi,et al.  Accurate evaluation of Ge metal—insulator—semiconductor interface properties , 2011 .

[20]  Hiroshi Tamura,et al.  20 A Combined Experimental and Numerical Approach for Motorcycle Crank Noise: Experimental Validation , 2002 .